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| PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Features * Generation 4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ultra- soft recovery * Industry standard package * UL approved Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 100A Benefits * Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25C ICM ILM IFM VGE VISOL PD @ TC = 25C PD @ TC = 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 100 200 200 200 20 2500 520 270 -40 to +150 -40 to +125 Units V A V W C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module Typ. -- -- 0.1 -- -- 200 Max. 0.24 0.35 -- 4.0 3.0 -- Units C/W N. m g www.irf.com 1 4/24/2000 GA100TS120U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 -- -- VGE = 0V, IC = 1mA -- 2.4 2.9 VGE = 15V, IC = 100A -- 2.2 -- V VGE = 15V, IC = 100A, TJ = 125C Gate Threshold Voltage 3.0 -- 6.0 IC = 1.25mA Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 1.25mA Forward Transconductance -- 136 -- S VCE = 25V, IC = 100A Collector-to-Emitter Leaking Current -- -- 1.0 mA VGE = 0V, VCE = 1200V -- -- 10 VGE = 0V, VCE = 1200V, TJ = 125C Diode Forward Voltage - Maximum -- 3.3 4.0 V IF = 100A, VGE = 0V -- 3.2 -- IF = 100A, VGE = 0V, TJ = 125C Gate-to-Emitter Leakage Current -- -- 250 nA VGE = 20V Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 830 140 275 172 141 435 343 14 21 35 18672 830 161 149 104 7664 1916 Max. Units Conditions 1245 VCC = 400V 210 nC IC = 124A 412 TJ = 25C -- RG1 = 15, RG2 = 0, -- ns IC = 100A -- VCC = 720V -- VGE = 15V -- mJ -- 52 -- VGE = 0V -- pF VCC = 30V -- = 1 MHz -- ns IC = 100A -- A RG1 = 15 -- C RG2 = 0 -- A/s VCC = 720V di/dt1300A/s 2 www.irf.com GA100TS120U 100 F or b oth: LOAD CURRENT (A) 75 D uty cycle : 50 % T J = 12 5 C T sink = 90 C G a te d rive a s spe cified P ow er D is s ipation = 170 W S q u a re w a v e : 50 60% of rated v oltage I 25 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , ICollector-to-Emitter Current) (A) C , Collector Current ( A IC , Collector Current ( A ) I C , Collector Current (A) TJ = 125 C TJ = 125 C 100 100 TJ = 25 C TJ = 25 C 10 10 1.0 V GE = 15V 80s PULSE WIDTH 2.0 3.0 4.0 1 5 6 V CC = 50V 5s PULSE WIDTH 7 8 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA100TS120U 120 4.0 80 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) 3.0 IC = 200 A IC = 100 A 2.0 40 IC = 50 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T h erm al R e s po ns e (Zth JC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 P DM S IN G LE P U LS E (TH E R M A L R E S P O N S E ) t 1 t2 Notes: 1. Duty factor D = t 1 / t2 0.01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 10 0.001 0.01 0.1 1 t 1 , R e cta n g u la r P u ls e D u ra tio n (s e c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA100TS120U 35000 VGE , Gate-to-Emitter Voltage (V) 28000 VGE = Cies = Cres = Coes = 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc 20 VCC = 400V I C = 113A 16 C, Capacitance (pF) Cies 21000 12 14000 8 Coes 7000 Cres 4 0 1 10 100 0 0 300 600 900 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 60 Total Switching Losses (mJ) 50 Total Switching Losses (mJ) V CC V GE TJ IC = 720V = 15V = 125 C = 100A 1000 RG1=15;RG2 = 0 G = Ohm VGE = 15V VCC = 720V 100 IC = 200 A IC = 100 A IC = 50 A 40 10 30 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) TJ , Junction Temperature C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA100TS120U 80 Total Switching Losses (mJ) 60 IC , Collector Current ( A ) RG =15;RG2 = 0 G1 = Ohm T J = 150 C 25 VCC = 720V VGE = 15V 300 VGE = 20V GE TJ = 125C J VCEmeas ured at terminal (Peak V oltage) 200 40 100 20 SA FE OPERA TING A REA 0 0 50 100 150 200 0 0 300 600 900 1200 A 1500 I C , Collector Current (A) VCE, C o lle c to r -to -E m itte r Vo lta g e (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Reverse Bias SOA 1000 16000 Instantaneous Forward Current - IF ( A ) I F = 200A 12000 TJ = 125C T = 25C J 100 IF = 100A I F = 50A QRR - ( nC) 8000 4000 10 0.0 1.0 2.0 3.0 4.0 5.0 0 400 VR = 7 20V T J = 1 25 C T J = 2 5C 800 1200 1600 2000 F o rw a rd Voltage ro p - - FM ) (V Forward Vo lta g e DDrop V VF M (V) di f /dt - (A/ s) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA100TS120U 240 VR = 72 0V TJ = 12 5C TJ = 25 C 250 VR = 72 0V TJ = 12 5C TJ = 25 C 200 200 IF = 200A IF = 100A IF = 50A I F = 200A I F = 100A I F = 50A trr - ( ns ) 160 IRRM - ( A ) 2000 150 100 120 50 80 400 800 1200 1600 0 400 800 1200 1600 2000 di f /dt - (A/ s) di f /dt - (A/ s) Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA100TS120U 90% V ge +V ge V ce Ic 10% V ce Ic 90% Ic 5% Ic td (off) tf E off = Vce Ic dt t1+5 S V ce ic dt t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 E rec = t4 V d idIc dt Vd dt t3 t1 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA100TS120U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0 F 100 V Vc* D.U.T. R L= 0 - 480V 480V 4 X IC @25C Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit www.irf.com 9 GA100TS120U Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 50s; single shot. Case Outline -- INT-A-PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com |
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